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TGF2965-SM +BOM

High Power Amplifier for Wide Bandwidth

Qorvo Inventory

Key Features

  • Frequency: 0.03 to 3.0 GHz
  • Output Power (P3dB): 6.0 W at 2 GHz
  • Linear Gain: 18 dB at 2 GHz
  • Typical PAE3dB: 63% at 2 GHz
  • Operating Voltage: 32 V
  • Low thermal resistance package
  • CW and Pulse capable
  • 3 x 3 mm package
Qorvo Original Stock

Specifications

Product Category RF JFET Transistors Transistor Type HEMT
Technology GaN-on-SiC Operating Frequency 30 MHz to 3 GHz
Gain 18 dB Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 32 V Vgs - Gate-Source Breakdown Voltage - 2.7 V
Id - Continuous Drain Current 600 mA Output Power 6 W
Maximum Drain Gate Voltage - Pd - Power Dissipation 7.5 W
Mounting Style SMD/SMT Configuration Single
Forward Transconductance - Min - Gate-Source Cutoff Voltage -
Moisture Sensitive Yes Product Type RF JFET Transistors
Rds On - Drain-Source Resistance - Series TGF2965
Factory Pack Quantity 100 Subcategory Transistors
Vgs th - Gate-Source Threshold Voltage - Part # Aliases TGF2965 1123170
Unit Weight 0.002014 oz Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
JESD-609 Code e4 RF/Microwave Device Type WIDE BAND HIGH POWER
Terminal Finish NICKEL GOLD

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