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TP2104N3-G +BOM

MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

TP2104N3-G
Datasheet:

TP2104N3-G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

175mA (Tj)
EDA/CAD Models:

Request Free CAD Models for TP2104N3-G

TP2104N3-G General Description

The TP2104N3-G is a compact MOSFET transistor designed for P Channel applications. With a maximum drain source voltage of -40V and a continuous drain current of -175mA, this transistor is suitable for a variety of low power circuit designs. The on resistance of 6ohm and threshold voltage of -2V make it a versatile component for efficient power management

Key Features

Low power consumption rate
Excellent load regulation
Compact package design

Microchip Technology, Inc Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	175mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	740mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	TP2104

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Ratings and Reviews

C**b 11/27/2023

Fast delivery to ukraine. Everything corresponds to the description. The driver and the program took from 4ps.ru.The programmer works without complaints.

A**n 05/04/2023

The seller did not send the goods, full of lying!

N**s 06/30/2022

Good cones, some can be selected for sound, esr allows, the capacity is smaller in this batch, but i'm quite satisfied, uncritical. in this store always good goods, maybe i'm lucky...

E**n 10/19/2021

Shipping is long. More than 5 days in tmn. Worker, noise did not hear