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See Technical Specifications

UJ4C075018K4S +BOM

750V, 18mOhm, 81A, SiC FET, CASCODE, G4, TO-247-4L, AEC-Q101, 175 Deg C

Manufacturer:

Qorvo
Mfr.Part #:

UJ4C075018K4S
Datasheet:

UJ4C075018K4S Datasheet (PDF)
FET Type:

N-Channel
Technology:

SiCFET (Cascode SiCJFET)
Drain To Source Voltage (Vdss):

750 V
Current - Continuous Drain (Id) @ 25°C:

81A (Tc)
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UJ4C075018K4S General Description

When it comes to power dissipation, the UJ4C075018K4S MOSFET excels with a rating of 385W, making it suitable for a wide range of applications where high power handling is required. Its single channel configuration simplifies circuit design, while the N-channel type ensures reliable performance. Whether you're designing power supplies, motor controls, or other high-power applications, this MOSFET delivers the performance and efficiency you need

Specifications

FET Type	N-Channel	Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	750 V	Current - Continuous Drain (Id) @ 25°C	81A (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ 20A, 12V	Vgs(th) (Max) @ Id	6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	37.8 nC @ 15 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1422 pF @ 100 V	Power Dissipation (Max)	385W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	UJ4C075