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UF3SC065007K4S +BOM

Characteristics: Suitable for applications requiring high power efficiency and reliability

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UF3SC065007K4S General Description

N-Channel 650 V 120A (Tc) 789W (Tc) Through Hole TO-247-4

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 120 A Rds On - Drain-Source Resistance 9 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 6 V
Qg - Gate Charge 214 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 789 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UF3SC
Configuration Single Fall Time 14 ns
Product Type MOSFET Rise Time 46 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 - N Channel Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 36 ns Unit Weight 0.211644 oz

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