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VP2106N3-G +BOM

MOSFET, P-Channel Enhancement-Mode, -60V, 12 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VP2106N3-G
Datasheet:

VP2106N3-G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

250mA (Tj)
EDA/CAD Models:

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VP2106N3-G General Description

The VP2106N3-G is a small signal field-effect transistor with a P-channel enhancement-mode vertical DMOS FET design. With a maximum current rating of 0.25A and a voltage capacity of 60V, this transistor is suitable for low-power applications requiring P-channel functionality

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Microchip Technology, Inc Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	1W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	VP2106
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	250 mA
Rds On - Drain-Source Resistance	15 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	4 ns
Forward Transconductance - Min	150 mmho	Height	5.33 mm
Length	5.21 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	5 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	FET
Typical Turn-Off Delay Time	5 ns	Typical Turn-On Delay Time	4 ns
Width	4.19 mm	Unit Weight	0.016000 oz