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ZVP3310FTA +BOM

ZVP3310FTA is a MOSFET with P-channel characteristics

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVP3310FTA
Datasheet:

ZVP3310FTA Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for ZVP3310FTA

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ZVP3310FTA General Description

For those seeking a dependable small signal field-effect transistor, the ZVP3310FTA is an excellent choice. Its SOT23 package houses a P-Channel enhancement mode vertical DMOS FET with a maximum current rating of 0.075A and a voltage rating of 100V. This single-element transistor, made of silicon metal-oxide semiconductor, is ideal for a wide range of electronic applications where reliability and performance are essential

Key Features

100 Volt VDS
RDS(on)=20Ω

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	75 mA	Rds On - Drain-Source Resistance	20 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	330 mW	Channel Mode	Enhancement
Series	ZVP3310	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	50 mS
Height	1.02 mm	Length	3.04 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	FET	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	8 ns	Width	1.4 mm
Unit Weight	0.000282 oz