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ZXTN08400BFFTA +BOM

High-voltage NPN transistor in SOT23F package with 0.5A current rating

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXTN08400BFFTA
Datasheet:

ZXTN08400BFFTA Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

400 V
EDA/CAD Models:

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ZXTN08400BFFTA General Description

Product ZXTN08400BFFTA from Diodes Incorporated is a versatile N-channel enhancement mode MOSFET specifically engineered for high-speed switching applications across a range of power management circuits. With a robust drain-source voltage rating of 40V and a continuous drain current rating of 6A, this MOSFET is a reliable choice for low to medium power requirements

Key Features

High reliability and long lifespan
Low power consumption and compact size
Suitable for medical and industrial applications

Application

Multiple uses
Versatile applications
Diverse functionality

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	400 V	Collector- Base Voltage VCBO	450 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	125 mV
Maximum DC Collector Current	500 mA	Pd - Power Dissipation	2 W
Gain Bandwidth Product fT	40 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	ZXTN08400
Height	1 mm	Length	3 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.7 mm	Unit Weight	0.001270 oz