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2MBI200N-060 +BOM

Robust insulated gate bipolar transistor for efficient energy transmissio

Key Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (~3 Times Rated Current)

Specifications

Part Life Cycle Code Obsolete Pin Count 7
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection ISOLATED Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 600 V Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
Fall Time-Max (tf) 350 ns JESD-30 Code R-XUFM-X7
Number of Elements 2 Number of Terminals 7
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 1600 W
Power Dissipation-Max (Abs) 800 W Qualification Status Not Qualified
Surface Mount NO Terminal Form UNSPECIFIED
Terminal Position UPPER Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 600 ns VCEsat-Max 2.8 V

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