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2MI50F-050 +BOM

Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2MI50F-050 General Description

Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Key Features

  • 8-pin SOIC package
  • Available in RoHS compliant package
  • IDT’s lowest cost clock divider
  • Low skew (500 ps) outputs. One is /2 of the other
  • Easy to use with other generators and buffers
  • Input clock frequency up to 156 MHz
  • Output clock duty cycle of 45/55
  • Power-down turns off chip
  • Output Enable
  • Advanced, low-power CMOS process
  • Operating voltage of 3.3 V or 5 V
  • Does not degrade phase noise - no PLL
  • Available in industrial and commercial temperature
  • ranges

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.11 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X8 Number of Elements 2
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application SWITCHING Transistor Element Material SILICON

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