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2N1486 +BOM

Bipolar (BJT) Transistor NPN 55 V 3 A 1.75 W Through Hole TO-8

2N1486 General Description

Bipolar (BJT) Transistor NPN 55 V 3 A 1.75 W Through Hole TO-8

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 55 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 12 V Collector-Emitter Saturation Voltage 750 mV
Maximum DC Collector Current 3 A Pd - Power Dissipation 1.75 W
Gain Bandwidth Product fT - Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C DC Collector/Base Gain hfe Min 35
DC Current Gain hFE Max 100 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 1.661227 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $138.445 $138.44
200+ $55.241 $11,048.20
500+ $53.395 $26,697.50
1000+ $52.483 $52,483.00

The prices below are for reference only.

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