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2N3019 +BOM
80V 800mW 50@500mA,10V 1A NPN TO-5 Bipolar Transistors - BJT ROHS
TO-5-3-
Manufacturer:
-
Mfr.Part #:
2N3019
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Datasheet:
-
Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
80 V
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EDA/CAD Models:
Availability: 6591 PCS
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2N3019 General Description
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39
Application
AMPLIFIERSpecifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 140 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 800 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Continuous Collector Current | 1 A | DC Collector/Base Gain hfe Min | 15 |
DC Current Gain hFE Max | 300 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.101682 oz |
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In Stock: 6,591
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.457 | $1.46 |
10+ | $1.234 | $12.34 |
30+ | $1.111 | $33.33 |
100+ | $0.974 | $97.40 |
500+ | $0.912 | $456.00 |
1000+ | $0.884 | $884.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N3019, guaranteed quotes back within 12hr.