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2N3441 +BOM

140V 3W 25@500mA,4V 3A NPN TO-66(TO-213AA) Bipolar Transistors - BJT ROHS

2N3441 General Description

Bipolar (BJT) Transistor NPN 140 V 3 A 3 W Through Hole TO-66 (TO-213AA)

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 140 V Collector- Base Voltage VCBO 160 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 3 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 25 at 500 mA, 4 VDC DC Current Gain hFE Max 100 at 500 mA, 4 VDC
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si

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In Stock: 7,418

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $71.663 $71.66
200+ $27.733 $5,546.60
500+ $26.759 $13,379.50
1000+ $26.276 $26,276.00

The prices below are for reference only.

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