This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2N3507 +BOM

Overview of 2N3507: Power Bipolar Transistors - BJT

Manufacturer:

Microchip
Mfr.Part #:

2N3507
Datasheet:

2N3507 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for 2N3507

2N3507 General Description

In high-frequency switching and amplification circuits, the 2N3507 shines with its transition frequency (ft) of 80MHz, ensuring reliable operation at higher frequencies. Additionally, its gain bandwidth product (GBW) of 100MHz signifies its ability to effectively amplify signals across a wide range of frequencies, making it a versatile option for various electronic designs

Key Features

High-speed data transmission and reception
Fast rise and fall times for reliable communication
Suitable for industrial control applications

Application

Motor control
Telecom equipment
Lighting systems

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	3 A	Pd - Power Dissipation	1 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
DC Collector/Base Gain hfe Min	35 at 500 mA, 1 V	DC Current Gain hFE Max	175 at 500 mA, 1 V
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si