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See Technical Specifications

2N3636 +BOM

Maximum Power Dissipation of 1000mW

Manufacturer:

Microchip
Mfr.Part #:

2N3636
Datasheet:

2N3636 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

175 V
EDA/CAD Models:

Request Free CAD Models for 2N3636

2N3636 General Description

When it comes to performance, the 2N3636 doesn't disappoint. With a gain bandwidth product of 30MHz, this transistor delivers reliable amplification capabilities across a wide frequency range. Its low collector-emitter saturation voltage of 0.3V ensures efficient power conversion, making it a top choice for low-voltage applications where energy efficiency is crucial

Key Features

The 2N36 transistor has many uses.
It's suitable for amplifying signals.
Its current gain is very high

Application

Perfect for signal amplification
Used in audio and voltage regulators
Popular in consumer electronics

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	175 V	Collector- Base Voltage VCBO	175 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	1 A	Pd - Power Dissipation	1 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
DC Collector/Base Gain hfe Min	50 at 50 mA, 10 VDC	DC Current Gain hFE Max	150 at 50 mA, 10 VDC
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.205840 oz