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2N3719 +BOM

Fast switching and high-frequency operation up to M

email Email: [email protected]
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tel Tel: +852 95804164

2N3719 General Description

Bipolar (BJT) Transistor PNP 40 V 3 A 60MHz 6 W Through Hole TO-5AA

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 4 V Collector-Emitter Saturation Voltage 750 mV
Maximum DC Collector Current 10 A Pd - Power Dissipation 6 W
Gain Bandwidth Product fT 60 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Continuous Collector Current 3 A
DC Collector/Base Gain hfe Min 25 at 1 A, 1.5 VDC DC Current Gain hFE Max 180 at 1 A, 1.5 VDC
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $45.028 $45.03
200+ $17.426 $3,485.20
500+ $16.812 $8,406.00
1000+ $16.510 $16,510.00

The prices below are for reference only.

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