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2N3735 +BOM

Bipolar (BJT) Transistor NPN 40 V 1.5 A 1 W Through Hole TO-39 (TO-205AD)

Bipolar (BJT) Transistor NPN 40 V 1.5 A 1 W Through Hole TO-39 (TO-205AD)

General-purpose NPN silicon switching transistor which operates over a wide temperature range.
Housed in a TO-39 case.
Also it will be available in chip form using the TBD chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/395 which Semicoa meets in all cases.

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Collector Current-Max (IC)	1.5 A	Collector-Emitter Voltage-Max	40 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	20
JEDEC-95 Code	TO-205AD	JESD-30 Code	O-MBCY-W3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	200 °C
Polarity/Channel Type	NPN	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	60 ns	Turn-on Time-Max (ton)	48 ns
Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	75 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	900 mV	Maximum DC Collector Current	1.5 A
Pd - Power Dissipation	1 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.184589 oz