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2N3766 +BOM

Precise control for automotive, industrial, and consumer market

Bipolar (BJT) Transistor NPN 60 V 4 A 25 W Through Hole TO-66 (TO-213AA)

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Case Connection	COLLECTOR	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	40	JEDEC-95 Code	TO-213AA
JESD-30 Code	O-MBFM-P2	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	2
Operating Temperature-Max	200 °C	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	25 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	PIN/PEG	Terminal Position	BOTTOM
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	10 MHz
Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	80 V	Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	2.5 V	Maximum DC Collector Current	4 A
Pd - Power Dissipation	25 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	4 A	DC Collector/Base Gain hfe Min	20
DC Current Gain hFE Max	160	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si	Unit Weight	0.338401 oz