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2N3868 +BOM

Bipolar Transistors - BJT Power BJT

Bipolar (BJT) Transistor PNP 60 V Through Hole TO-39

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Additional Feature	HIGH RELIABILITY	Collector Current-Max (IC)	3 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	20	JEDEC-95 Code	TO-5
JESD-30 Code	O-MBCY-W3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	1 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	60 MHz
Turn-off Time-Max (toff)	600 ns	Turn-on Time-Max (ton)	100 ns
Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	60 V	Emitter- Base Voltage VEBO	4 V
Collector-Emitter Saturation Voltage	500 mV	Maximum DC Collector Current	3 mA
Pd - Power Dissipation	1 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
DC Collector/Base Gain hfe Min	30 at 1.5 A, 2 VDC	DC Current Gain hFE Max	150 at 1.5 A, 2 VDC
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.652216 oz