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2N4117A +BOM
4-pin N-channel JFET with TO-72 packaging
TO-72-4-
Manufacturer:
-
Mfr.Part #:
2N4117A
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Configuration:
Single
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EDA/CAD Models:
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Availability: 3684 PCS
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2N4117A General Description
The 2N4117A JFET transistor is a versatile semiconductor device, widely used in low-power amplifier and switching applications. With a maximum Drain-Source Voltage (Vds) of 35V and a Maximum Power Dissipation (Pd) of 350mW, this small signal N-channel JFET offers reliable performance in various circuit designs. Its low noise, high input impedance, and good gain characteristics make it a popular choice for audio amplifiers, instrumentation, and other low-power signal processing circuits
Key Features
- Precise timing and control
- Low latency, high speed data transfer
- Precision data processing
- Suitable for telecommunications applications
- Fully sealed against environmental hazards
- Robust and reliable operation
Application
- Communications systems
- Measurement systems
- Frequency generators
Specifications
Product Category | JFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Configuration | Single | Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - Gate-Source Breakdown Voltage | - 40 V | Gate-Source Cutoff Voltage | - 1.8 V |
Drain-Source Current at Vgs=0 | 90 uA | Id - Continuous Drain Current | 1 nA |
Pd - Power Dissipation | 300 mW | Series | 2N411 |
Forward Transconductance - Min | 70 uS | Product Type | JFETs |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Type | JFET | Unit Weight | 0.023558 oz |
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In Stock: 3,684
Minimum Order: 1
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