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2N4150 +BOM

Bipolar Transistors - BJT 70 V Power BJT

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2N4150 General Description

Bipolar (BJT) Transistor NPN 70 V 10 A 1 W Through Hole TO-5AA

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 10 A Collector-Emitter Voltage-Max 70 V
Configuration SINGLE DC Current Gain-Min (hFE) 10
JEDEC-95 Code TO-5 JESD-30 Code O-MBCY-W3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 5 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form WIRE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 15 MHz Turn-off Time-Max (toff) 2000 ns
Turn-on Time-Max (ton) 550 ns

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In Stock: 5,290

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $14.493 $14.49
200+ $5.784 $1,156.80
500+ $5.590 $2,795.00
1000+ $5.494 $5,494.00

The prices below are for reference only.

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