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2N4261 +BOM

Bipolar (BJT) Transistor PNP 15 V 30 mA 200 mW Through Hole TO-72

2N4261 General Description

Bipolar (BJT) Transistor PNP 15 V 30 mA 200 mW Through Hole TO-72

Key Features

  • Hermetically sealed TO-72 metal can
  • Also available in chip configuration
  • Chip geometry 0014
  • Reference document: MIL-PRF-19500/511
  • Benefits
  • Qualification Levels: JAN, JANTX, JANTXV and JANS
  • Radiation testing available

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 0.03 A Configuration SINGLE
DC Current Gain-Min (hFE) 30 JESD-609 Code e0
Operating Temperature-Max 200 °C Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.2 W Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb) Transition Frequency-Nom (fT) 2000 MHz

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