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See Technical Specifications

2N6306 +BOM

Bipolar Transistors - BJT Power BJT

Manufacturer:

Microchip
Mfr.Part #:

2N6306
Datasheet:

2N6306 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

250 V
EDA/CAD Models:

Request Free CAD Models for 2N6306

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2N6306 General Description

Bipolar (BJT) Transistor NPN 250 V 8 A 125 W Through Hole TO-204AD (TO-3)

Application

Designed for high voltage inverters,switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V	Collector- Base Voltage VCBO	500 V
Emitter- Base Voltage VEBO	8 V	Collector-Emitter Saturation Voltage	5 V
Maximum DC Collector Current	8 A	Pd - Power Dissipation	125 W
Gain Bandwidth Product fT	-	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si