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2N6339 +BOM

Bipolar (BJT) Transistor

Manufacturer:

MICROCHIP
Mfr.Part #:

2N6339
Datasheet:

2N6339 Datasheet (PDF)
Factory Pack Quantity:

1
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for 2N6339

2N6339 General Description

Designers can count on the 2N6339 transistor to provide reliable performance in a variety of applications. With its TO-3 package and maximum power dissipation of 120W, this silicon PNP transistor is capable of meeting medium power requirements with ease. Its high gain-bandwidth product of 15MHz ensures stable amplification, while the low saturation voltage allows for efficient switching operations

Specifications

Transistor Type	-	Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	-	Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	-	DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	-	Frequency - Transition	-
Operating Temperature	-	Mounting Type	-
Product Category	Bipolar Transistors - BJT	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si

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In Stock: 7,305

Minimum Order: 1

Qty.	Unit Price	Ext. Price
1+	$8.644	$8.64
200+	$3.450	$690.00
500+	$3.334	$1,667.00
1000+	$3.277	$3,277.00

The prices below are for reference only.

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Top Sellers

2N6339

MICROCHIP

Availability: 7,305 PCS

TO-3

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