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2N6341 +BOM

150V 200W 30@10A,2V NPN TO-3 Bipolar Transistors - BJT ROHS

The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

High Collector-Emitter Sustaining Voltage
V_CEO(sus) = 100 Vdc (Min) 2N6338
V_CEO(sus) = 150 Vdc (Min) - 2N6341
High DC Current Gain
h_FE = 30 - 120 @ I_C = 10 Adc
h_FE = 12 (Min) @ I_C = 25 Adc
Low Collector-Emitter Saturation Voltage
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
Fast Switching Times @ I_C = 10 Adc
t_r = 0.3 µs (Max)
t_s = 1.0 µs (Max)
t_f = 0.25 µs (Max)
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	150 V	Collector- Base Voltage VCBO	180 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	1.8 V
Maximum DC Collector Current	25 A	Pd - Power Dissipation	200 W
Gain Bandwidth Product fT	40 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	25 A
DC Collector/Base Gain hfe Min	50	Height	8.51 mm
Length	39.37 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Technology	Si	Width	26.67 mm
Unit Weight	0.056438 oz