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2N6353 +BOM

Bipolar (BJT) Transistor NPN - Darlington 150 V 5 A 2 W Through Hole TO-66 (TO-213AA)

2N6353 General Description

Bipolar (BJT) Transistor NPN - Darlington 150 V 5 A 2 W Through Hole TO-66 (TO-213AA)

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 150 V Collector- Base Voltage VCBO 150 V
Emitter- Base Voltage VEBO 12 V Collector-Emitter Saturation Voltage 2.5 V
Maximum DC Collector Current 5 A Pd - Power Dissipation 2 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 5 A DC Collector/Base Gain hfe Min 200
DC Current Gain hFE Max 10000 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 0.892167 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $82.080 $82.08
200+ $32.751 $6,550.20
500+ $31.657 $15,828.50
1000+ $31.116 $31,116.00

The prices below are for reference only.

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