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10A 6W output for robust power amplification
TO-3Manufacturer:
Mfr.Part #:
2N6383
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
40 V
EDA/CAD Models:
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Bipolar (BJT) Transistor NPN - Darlington 40 V 10 A 6 W Through Hole TO-204AA (TO-3)
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 3 V |
Maximum DC Collector Current | 10 A | Pd - Power Dissipation | 6 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Continuous Collector Current | 10 A | DC Collector/Base Gain hfe Min | 100 |
DC Current Gain hFE Max | 20000 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $192.071 | $192.07 |
200+ | $76.638 | $15,327.60 |
500+ | $74.076 | $37,038.00 |
1000+ | $72.812 | $72,812.00 |
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