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2N6383 +BOM

10A 6W output for robust power amplification

2N6383 General Description

Bipolar (BJT) Transistor NPN - Darlington 40 V 10 A 6 W Through Hole TO-204AA (TO-3)

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 3 V
Maximum DC Collector Current 10 A Pd - Power Dissipation 6 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Continuous Collector Current 10 A DC Collector/Base Gain hfe Min 100
DC Current Gain hFE Max 20000 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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