This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

2N6437 +BOM

Bipolar Transistors - BJT Power BJT

2N6437 General Description

Bipolar (BJT) Transistor PNP 100 V 25 A Through Hole TO-3

Key Features

  • High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A
  • Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A
  • Complementto2N6338 thru 2N6340

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 25 A Collector-Emitter Voltage-Max 100 V
DC Current Gain-Min (hFE) 30 JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2 JESD-609 Code e0
Number of Terminals 2 Polarity/Channel Type PNP
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Element Material SILICON

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up