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2SAR544PHZGT100 +BOM

Bipolar Transistors - BJT PNP, SOT-89, -80V -2.5A, Middle Power Transistor for Automotive

2SAR544PHZGT100 General Description

Bipolar (BJT) Transistor PNP 80 V 2.5 A 280MHz 500 mW Surface Mount SOT-89

ROHM Semiconductor Inventory

Key Features

  • Low saturation voltage V
  • CE(sat)
  • C
  • B
  • High speed switching
  • AEC-Q101 Qualified

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series Automotive, AEC-Q101
Transistor Type PNP Current - Collector (Ic) (Max) 2.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 3V
Power - Max 500 mW Frequency - Transition 280MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount

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2SAR544PHZGT100 Datasheet PDF

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