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The product labeled 2SB1351 is characterized by its Darlington PNP transistor configuration
TO-220FManufacturer:
Mfr.Part #:
2SB1351
Datasheet:
Transistor Type:
PNP - Darlington
Current - Collector (Ic) (Max):
12 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 20mA, 10A
EDA/CAD Models:
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The 2SB1351 PNP silicon transistor is a robust and dependable component that delivers consistent performance in a range of electronic applications. With its high collector current (IC) rating of 2A, collector-emitter voltage (VCEO) rating of 50V, and power dissipation (Ptot) of 20W, this transistor is well-equipped to handle demanding tasks. Its transition frequency (fT) of 30MHz also makes it suitable for high-frequency applications, further enhancing its versatility
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors | Series | - |
Transistor Type | PNP - Darlington | Current - Collector (Ic) (Max) | 12 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 10A |
Current - Collector Cutoff (Max) | 10µA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 10A, 4V |
Power - Max | 30 W | Frequency - Transition | 130MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
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Qty. | Unit Price | Ext. Price |
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The prices below are for reference only.
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