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See Technical Specifications

APT80GA60LD40 +BOM

600V Punch-Thru IGBT.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

APT80GA60LD40
Datasheet:

APT80GA60LD40 Datasheet (PDF)
Power Dissipation (W) [max]:

250 - 1042
Collector Current (dc) (A) [max]:

27 - 102
Feature-channel-type:

N
Feature-configuration:

Single
EDA/CAD Models:

Request Free CAD Models for APT80GA60LD40

APT80GA60LD40 General Description

By incorporating punch-through technology and a proprietary metal gate, the APT80GA60LD40 IGBT has been specifically designed for fast switching capabilities. This makes it an ideal choice for applications that require high frequency and high voltage, such as switch-mode power supplies and other tail current sensitive applications. Its optimized design ensures reliable performance and efficiency in demanding high-power environments

Key Features

Microchip Technology, Inc Original Stock

Specifications

Product Type	Discrete IGBT	Power Dissipation (W) [max]	250 - 1042
Collector Current (dc) (A) [max]	27 - 102	feature-technology
feature-channel-type	N	feature-configuration	Single
feature-maximum-gate-emitter-voltage-v	±30	feature-maximum-collector-emitter-voltage-v	600
feature-maximum-continuous-collector-current-a	143	feature-maximum-power-dissipation-mw	625
feature-packaging	Tube	feature-rad-hard
feature-pin-count	3	feature-cecc-qualified	No
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc		feature-svhc-exceeds-threshold	No