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APTGT100TL170G +BOM

IGBT Modules DOR CC6205

APTGT100TL170G General Description

IGBT Module Trench Field Stop Three Level Inverter 1700 V 150 A 560 W Chassis Mount SP6

Microchip Technology, Inc Inventory
Microchip Technology, Inc Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series -
IGBT Type Trench Field Stop Configuration Three Level Inverter
Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 150 A
Power - Max 560 W Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 100A
Current - Collector Cutoff (Max) 350 µA Input Capacitance (Cies) @ Vce 9 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Base Product Number APTGT100 Product Category: IGBT Modules
Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2 V Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 500 nA Pd - Power Dissipation: 560 W
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 100 C
Packaging: Tube Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount Product Type: IGBT Modules
Factory Pack Quantity: 1 Subcategory: IGBTs
Technology: Si Unit Weight: 3.880136 oz

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