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BC847BPDW1T3G +BOM

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor

Manufacturer:

onsemi
Mfr.Part #:

BC847BPDW1T3G
Datasheet:

BC847BPDW1T3G Datasheet (PDF)
Transistor Type:

1 NPN, 1 PNP
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

45V
Vce Saturation (Max) @ Ib, Ic:

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
EDA/CAD Models:

Request Free CAD Models for BC847BPDW1T3G

BC847BPDW1T3G General Description

The BC847BPDW1T3G from ON Semiconductor is a versatile surface-mount NPN bipolar junction transistor designed for a wide range of electronic applications. With its compact SOT-363 package housing three transistors in one, this component offers a space-efficient solution for general-purpose amplifier and switching tasks. Each transistor in the package boasts a 100mA maximum collector current and 45V maximum collector-emitter voltage, ensuring reliable performance under varying load conditions

Key Features

High-speed switching and amplifying
Laser diode driver technology
Fast recovery rectifier characteristics
Low voltage high current capability
Suitable for motor control applications
Rugged and reliable power management

Specifications

Transistor Type	1 NPN, 1 PNP	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	380mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BC847