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BC847BS +BOM

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

BC847BS General Description

This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07.

Key Features

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 650 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series BC847BS
Continuous Collector Current 100 mA Height 1 mm
Length 2 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.25 mm
Unit Weight 0.000988 oz

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In Stock: 6,234

Minimum Order: 1

Qty. Unit Price Ext. Price
10+ $0.022 $0.22
100+ $0.018 $1.80
300+ $0.015 $4.50
3000+ $0.015 $45.00
6000+ $0.013 $78.00
9000+ $0.012 $108.00

The prices below are for reference only.

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