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BCP55 +BOM

Bipolar Transistors - BJT SOT-223 NPN GP AMP

BCP55 General Description

The BCP55 device caters to a broad range of applications, excelling in medium power amplification and efficient switching operations with collector currents reaching 1.0 A. Produced through Process 38, this component upholds high standards of performance and reliability. To delve deeper into its characteristics, please review the documentation provided for the BCP54 model

Application

  • This product is general usage and suitable for many different applications.

Specifications

IC max 1000.0 mA hFE max 250.0
hFE min 40.0 VCE(sat) max 0.5 V
ICBO max 100.0 nA Ptot max 2000.0 mW
VCEO max 60.0 V ICM max 1500.0 mA
VCBO max 60.0 V VEBO max 5.0 V
IBM max 200.0 mA Polarity NPN (Single)
Mounting SMT

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