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Bipolar Transistors - BJT SOT-223 NPN GP AMP
P-SOT223-4-10Manufacturer:
Infineon
Mfr.Part #:
BCP55
Datasheet:
IC Max:
1000.0 mA
HFE Max:
250.0
HFE Min:
40.0
VCE(sat) Max:
0.5 V
EDA/CAD Models:
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The BCP55 device caters to a broad range of applications, excelling in medium power amplification and efficient switching operations with collector currents reaching 1.0 A. Produced through Process 38, this component upholds high standards of performance and reliability. To delve deeper into its characteristics, please review the documentation provided for the BCP54 model
IC max | 1000.0 mA | hFE max | 250.0 |
hFE min | 40.0 | VCE(sat) max | 0.5 V |
ICBO max | 100.0 nA | Ptot max | 2000.0 mW |
VCEO max | 60.0 V | ICM max | 1500.0 mA |
VCBO max | 60.0 V | VEBO max | 5.0 V |
IBM max | 200.0 mA | Polarity | NPN (Single) |
Mounting | SMT |
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