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BFP720FESDH6327XTSA1 +BOM

RF Transistor NPN 4.7V 30mA 45GHz 100mW Surface Mount 4-TSFP

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BFP720FESDH6327XTSA1 General Description

RF Transistor NPN 4.7V 30mA 45GHz 100mW Surface Mount 4-TSFP

Infineon Technologies Corporation Inventory

Key Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV HBM ESD hardness.
  • High transition frequency = 0.8 dB at 5.5 GHz, 3V, 5 mA
  • High gain>>
  • Low profile and small form factor leadless package
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.7V
Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
Gain 10dB ~ 29dB Power - Max 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 15mA, 3V Current - Collector (Ic) (Max) 30mA
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number BFP720 RHoS yes
PBFree yes HalogenFree yes
Product Category RF Bipolar Transistors Technology Si
Product Type RF Bipolar Transistors Subcategory Transistors
Part # Aliases BFP 720FESD H6327 SP000853562

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BFP720FESDH6327XTSA1 Datasheet PDF

Preliminary Specification BFP720FESDH6327XTSA1 PDF Download

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