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See Technical Specifications

BFU550AR +BOM

Trans GP NPN 12V 0.05A 3-Pin SOT-23 T/R

Manufacturer:

NXP Semiconductor
Mfr.Part #:

BFU550AR
Datasheet:

BFU550AR Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

NPN
Voltage - Collector Emitter Breakdown (Max):

12V
Frequency - Transition:

11GHz
EDA/CAD Models:

Request Free CAD Models for BFU550AR

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BFU550AR General Description

When it comes to high power amplification, the BFU550AR transistor is a top contender. Its impressive specs include a maximum collector current of 16A and a maximum collector emitter voltage of 230V. With a high DC current gain ranging from 50 to 300 at a collector current of 250mA, this transistor is a reliable choice for high power amplifier applications. Housed in a convenient SOT-345 surface mount package, installation is quick and easy. Rest assured, this transistor is RoHS compliant and meets all quality and reliability standards, making it a versatile option for a range of electronic designs

Key Features

NPN Wideband Silicon RF Transistor

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors	Series	Automotive, AEC-Q101
Transistor Type	NPN	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	11GHz	Noise Figure (dB Typ @ f)	0.6dB @ 900MHz
Gain	18dB	Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 15mA, 8V	Current - Collector (Ic) (Max)	50mA
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BFU550	Product Category	RF Bipolar Transistors
Technology	Si	Transistor Polarity	NPN
Operating Frequency	900 MHz	DC Collector/Base Gain hfe Min	60
Collector- Emitter Voltage VCEO Max	16 V	Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	15 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Configuration	Single
Mounting Style	SMD/SMT	Collector- Base Voltage VCBO	24 V
DC Current Gain hFE Max	200	Gain Bandwidth Product fT	11 GHz
Height	1.1 mm	Length	3 mm
Maximum DC Collector Current	80 mA	Operating Temperature Range	- 40 C to + 150 C
Output Power	13.5 dBm	Pd - Power Dissipation	450 mW
Product Type	RF Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Type	Wideband RF Transistor
Width	1.4 mm	Part # Aliases	934067699215
Unit Weight	0.000917 oz