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BFR91A +BOM

High durability RF bipolar junction transistor integrated circuit

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Lead (Pb)-free component
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 12 V Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 2 V Maximum DC Collector Current 50 mA
Pd - Power Dissipation 300 mW Gain Bandwidth Product fT 5 GHz
DC Collector/Base Gain hfe Min 25 Height 2.5 mm
Length 4.8 mm Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si
Width 4.8 mm

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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