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BLF6G22-180PN +BOM

RF MOSFET Transistors LDMOS TNS

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Tel: +852 95804164

RF Mosfet 32 V 1.6 A 2.11GHz ~ 2.17GHz 17.5dB 50W SOT539A

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA:
♦ Average output power = 50 W
♦ Power gain = 17.5 dB (typ)
♦ Efficiency = 27.5 %
♦ ACPR = −35 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Qualified up to a supply voltage of 32 V
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Source Content uid	BLF6G22-180PN	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	4
Reach Compliance Code		ECCN Code	EAR99
Case Connection	SOURCE	Configuration	COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min	65 V	FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	S BAND	JESD-30 Code	R-CDFM-F4
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	225 °C	Polarity/Channel Type	N-CHANNEL
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON