This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BLT81,115 +BOM

RF Bipolar Transistors NPN 6-7.5V 500mA UHF

RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mount SC-73

HIGH RELIABILITY

AMPLIFIER

Source Content uid	BLT81,115	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00
Date Of Intro	1993-03-01	Additional Feature	HIGH RELIABILITY
Case Connection	COLLECTOR	Collector Current-Max (IC)	0.5 A
Collector-Base Capacitance-Max	4 pF	Collector-Emitter Voltage-Max	9.5 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	25
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND	JESD-30 Code	R-PDSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN	Power Dissipation Ambient-Max	2 W
Power Dissipation-Max (Abs)	2 W	Power Gain-Min (Gp)	6 dB
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transistor Type	NPN	Voltage - Collector Emitter Breakdown (Max)	9.5V
Frequency - Transition	900MHz	Gain	8dB
Power - Max	2W	DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 300mA, 5V
Current - Collector (Ic) (Max)	500mA	Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	BLT8