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BSC011N03LS +BOM

Product BSC011N03LS is a N-channel MOSFET with a maximum voltage rating of 30V and a current rating of 37A, featuring a low on-resistance of 1

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC011N03LS
Datasheet:

BSC011N03LS Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for BSC011N03LS

BSC011N03LS General Description

The BSC011N03LS Power MOSFET from Infineon Technologies is a top-of-the-line transistor that offers exceptional performance for high-efficiency power management systems. With a maximum drain-source voltage of 30V and a continuous drain current of 100A, this MOSFET is well-suited for a variety of power electronics applications. Its low on-state resistance of 1.1mΩ ensures minimal power losses and optimal efficiency, making it a reliable choice for power conversion circuits

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 15 V	Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC011