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BSC016N06NSTATMA1 +BOM

Transistor MOSFET N-channel 60 volts 31 amps 8-pin TDSON EP tape and reel

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC016N06NSTATMA1
Datasheet:

BSC016N06NSTATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for BSC016N06NSTATMA1

BSC016N06NSTATMA1 General Description

The BSC016N06NSTATMA1 is a power MOSFET transistor that is specifically tailored for high power applications. With its 60V drain-source voltage (VDS) and 160A continuous drain current (ID), this MOSFET is ideal for a wide range of power conversion and control applications. Its low on-resistance (RDS(on)) of 1.6mΩ minimizes power losses and enhances efficiency in high-current circuits, while the low gate charge (Qg) of 250nC allows for fast switching speeds and reduced switching losses in the circuit. Its TO-220 package with through-hole mounting style ensures easy integration into existing circuit designs, and its wide operating temperature range from -55°C to 175°C guarantees reliable performance even in harsh environments

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 30 V	Power Dissipation (Max)	3W (Ta), 167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC016