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BSC017N04NS G +BOM

The BSC017N04NS G MOSFET is engineered for N-channel power switching tasks

BSC017N04NS G General Description

N-Channel 40 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1

Key Features

  • Optimized for Synchronous Rectification
  • 35% lower RDS(on) than alternative devices
  • 45% improvement of FOM over similar devices
  • Integrated Schottky-like diode
  • RoHS compliant - halogen free
  • MSL1 rated
  • Benefits
  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Specifications

Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 20 V Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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Qty. Unit Price Ext. Price
1+ $2.133 $2.13
200+ $0.826 $165.20
500+ $0.797 $398.50
1000+ $0.784 $784.00

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