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BSC018NE2LSI +BOM
TDSON EP T/R N-channel 25V 29A 8-pin MOSFET
8-PowerTDFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
BSC018NE2LSI
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Datasheet:
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Series:
OptiMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
25 V
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EDA/CAD Models:
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Availability: 9168 PCS
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BSC018NE2LSI General Description
N-Channel 25 V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
Specifications
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V | Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 12 V | Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC018 |
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In Stock: 9,168
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.224 | $1.22 |
200+ | $0.473 | $94.60 |
500+ | $0.458 | $229.00 |
1000+ | $0.448 | $448.00 |
The prices below are for reference only.
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