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BSC027N04LSGATMA1 +BOM

BSC027N04LSGATMA1 is a N-type MOSFET designed to operate at 30 volts with a maximum current rating of 80 amps. It is housed in a PG-TDSON-8 package

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC027N04LSGATMA1
Datasheet:

BSC027N04LSGATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Models:

Request Free CAD Models for BSC027N04LSGATMA1

BSC027N04LSGATMA1 General Description

The OptiMOS 40V transistor, part of the BSC027N04LSGATMA1 product line, is designed for synchronous rectification and is particularly suitable for use in switched mode power supplies for servers, desktops, and a wide range of industrial applications. With its excellent gate charge x R DS(on) product and very low on-resistance, this transistor is capable of achieving high system efficiency and reducing system costs by requiring less paralleling. Furthermore, its RoHS compliance and halogen-free composition make it environmentally friendly and safe for use in various applications. The OptiMOS 40V is ideal for fast switching applications, ensuring minimal voltage overshoot and increasing power density within the system

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	2V @ 49µA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6800 pF @ 20 V	Power Dissipation (Max)	2.5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC027