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See Technical Specifications

BSC028N06NST +BOM

MOSFET TRENCH 40<-<100V

Manufacturer:

INFINEON TECHNOLOGIES AG
Mfr.Part #:

BSC028N06NST
Datasheet:

BSC028N06NST Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

100 mJ
EDA/CAD Models:

Request Free CAD Models for BSC028N06NST

BSC028N06NST General Description

In addition to its temperature improvements, the BSC028N06NST also boasts a 20% improvement in the safe operating area (SOA). This means that the MOSFET is able to operate more reliably and efficiently, even under high stress conditions, ensuring consistent performance and longevity

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	137 A
Drain-source On Resistance-Max	0.0028 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	56 pF	JESD-30 Code	R-PDSO-F8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	100 W	Pulsed Drain Current-Max (IDM)	548 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	54 ns	Turn-on Time-Max (ton)	79 ns