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See Technical Specifications

BSC032N03SG +BOM

High Current Switch

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC032N03SG
Datasheet:

BSC032N03SG Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for BSC032N03SG

BSC032N03SG General Description

The BSC032N03SG from Infineon Technologies is a high-performance N-channel Power MOSFET transistor suitable for demanding applications in automotive, industrial, and consumer electronics. With a Vds of 30V and Id of 70A, it is designed to handle high current and high voltage requirements. Its low Rds(on) of 3.2 mΩ minimizes power losses and maximizes efficiency in power conversion applications. Additionally, the low gate charge of 37 nC enables fast switching speeds and reduced switching losses, making it ideal for high-frequency applications. Housed in a TO-263 package, the BSC032N03SG offers excellent thermal performance and easy mounting on a PCB. Furthermore, its RoHS compliance ensures that it meets stringent environmental standards, making it a reliable and environmentally friendly choice for power MOSFET applications

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5080 pF @ 15 V	Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount