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BSC037N08NS5ATMA1 +BOM

MOSFET transistor suitable for high-power circuit designs, featuring N-channel design with 80V voltage rating and 100A current capability

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC037N08NS5ATMA1
Datasheet:

BSC037N08NS5ATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

80 V
EDA/CAD Models:

Request Free CAD Models for BSC037N08NS5ATMA1

BSC037N08NS5ATMA1 General Description

The BSC037N08NS5ATMA1 MOSFET from the OptiMOS 5 Series is a versatile and robust component ideal for a wide range of applications. With a continuous drain current of 100A and a maximum drain source voltage of 80V, this N-channel transistor offers reliable performance in high-power circuits. The low on-resistance of 0.0034ohm and threshold voltage of 3V make it an efficient choice for power management applications. Operating at temperatures up to 150°C, this MOSFET is designed to withstand harsh conditions and deliver consistent results

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	3.8V @ 72µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200 pF @ 40 V	Power Dissipation (Max)	2.5W (Ta), 114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC037