This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BSC047N08NS3 G +BOM

Transistor MOSFET N-channel with 80V voltage rating

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC047N08NS3 G
Datasheet:

BSC047N08NS3 G Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

80 V
EDA/CAD Models:

Request Free CAD Models for BSC047N08NS3 G

BSC047N08NS3 G General Description

Infineon Technologies' BSC047N08NS3 G stands out as a reliable N-channel power MOSFET tailored for a diverse set of applications, including DC-DC converters, motor control, and power supplies. With a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V, this MOSFET is well-equipped to handle high-power requirements with ease. Its low on-state resistance of 8mΩ ensures minimal power losses and heightened efficiency, especially in high-current scenarios. Furthermore, the gate threshold voltage of 2.5V and gate charge of 58nC facilitate seamless integration with standard digital logic circuits, streamlining the design and implementation process. The low input capacitance of 2850pF and fast switching speed further enhance its suitability for high-frequency operations, making it a versatile choice for a wide range of applications

Key Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel; Logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 40 V	Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC047