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Power transistor with MOSFET technology
8-PowerTDFNManufacturer:
Infineon Technologies
Mfr.Part #:
BSC0702LSATMA1
Datasheet:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
60 V
EDA/CAD Models:
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N-Channel 60 V 100A (Tc) 83W (Tc) Surface Mount PG-TDSON-8
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 2.3V @ 49µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 30 V | FET Feature | Standard |
Power Dissipation (Max) | 83W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | BSC0702 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.085 | $1.08 |
10+ | $0.922 | $9.22 |
30+ | $0.842 | $25.26 |
100+ | $0.761 | $76.10 |
500+ | $0.580 | $290.00 |
1000+ | $0.554 | $554.00 |
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