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The BSC072N03LD G is designed in a TDSON-8 package for optimal performance and heat dissipation
8-PowerVDFNManufacturer:
Infineon Technologies
Mfr.Part #:
BSC072N03LD G
Datasheet:
Series:
OptiMOS™
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
EDA/CAD Models:
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The transistor is housed in a PG-TSDSON-8 case style and has a maximum of 8 pins. Its voltage rating allows for a maximum Vgs of 20V, providing flexibility in driving the MOSFET. This product is free from any Substances of Very High Concern (SVHC), making it environmentally friendly
Series | OptiMOS™ | Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 11.5A |
Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 15V |
Power - Max | 57W | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | BSC072N03 |
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